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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1506 DESCRIPTION *With TO-126 package *Complement to type 2SB1065 *Low collector saturation voltage APPLICATIONS *For use in low frequency power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25 PC Collector power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 1.2 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 60 50 5 3 4.5 10 W UNIT V V V A A SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=1mA ,IB=0 IC=50A ,IE=0 IE=50A ,IC=0 IC=2A; IB=0.2A IC=2A; IB=0.2A VCB=40V; IE=0 VEB=4V; IC=0 IC=0.5A ; VCE=3V IE=0 ; VCB=10V,f=1MHz IC=0.5A ; VCE=5V 56 MIN 50 60 5 2SD1506 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE COB fT TYP. MAX UNIT V V V 1.0 1.5 1.0 1.0 390 40 90 V V A A pF MHz hFE Classifications N 56-120 P 82-180 Q 120-270 R 180-390 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1506 Fig.2 Outline dimensions 3 |
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